Observation of gain operation mode in Ge:B BIB THz detector

THz operation of asymmetric-nanochannel devices.

The THz spectrum lies between microwaves and the mid-infrared, a region that remains largely unexplored mainly due to the bottleneck issue of lacking compact, solid state, emitters and detectors. Here, we report on a novel asymmetric-nanochannel device, known as the self-switching device, which can operate at frequencies up to 2.5 THz for temperature up to 150 K. This is, to our knowledge, not ...

Observation of Raman Gain in Reduced Length of Bismuth Erbium Doped Fiber

Raman amplification of a 49 cm Bismuth oxide (Bi2O3) as a nonlinear gainmedium based erbium doped fiber amplifier (EDFA) is reported in new and compactdesign in near infrared spectral regions. The bismuth glass host provides theopportunity to be doped heavily with erbium ions to allow a compact optical gain fiberamplifier design by using reduced fiber length and the 1480...

THz Pyro-Optical Detector Based on LiNbO3 Whispering Gallery Mode Microdisc Resonator

This study analyzes the capabilities of a LiNbO₃ whispering gallery mode microdisc resonator as a potential bolometer detector in the THz range. The resonator is theoretically characterized in the stationary regime by its thermo-optic and thermal coefficients. Considering a Q-factor of 10⁷, a minimum detectable power of 20 μW was evaluated, three orders of magnitude above its noise equivalent p...

Ultrafast graphene-based broadband THz detector

Antenna Enhanced Graphene THz Emitter and Detector.

Recent intense electrical and optical studies of graphene have pushed the material to the forefront of optoelectronic research. Of particular interest is the few terahertz (THz) frequency regime where efficient light sources and highly sensitive detectors are very challenging to make. Here we present THz sources and detectors made with graphene field effect transistors (GFETs) enhanced by a dou...